Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...

The need to improve electronic circuits’ efficiency, to follow the ongoing trend to lower supply voltages and higher operating currents and to deal with multiple supply voltages has lead to certain ...

Last time on Circuit VR, we looked at creating a very simple common emitter amplifier, but we didn’t talk about how to select the capacitor values, or much about why we wanted them. We are going to ...

Over the recent weeks here at Hackaday, we’ve been taking a look at the humble transistor. In a series whose impetus came from a friend musing upon his students arriving with highly developed ...